| 2012 | ||
|---|---|---|
| j3 | P. Fernández-Martínez, F. R. Palomo, S. Díez, Salvador Hidalgo, M. Ullán, D. Flores, Roland Sorge: Simulation methodology for dose effects in lateral DMOS transistors. Microelectronics Journal 43(1): 50-56 (2012) | |
| 2006 | ||
| j2 | M. Ullán, M. Lozano, M. Chmeissani, G. Blanchot, Enric Cabruja, J. García, M. Maiorino, R. Martínez, G. Pellegrini, C. Puigdengoles: Test structure assembly for bump bond yield measurement on high density flip chip technologies. Microelectronics Reliability 46(7): 1095-1100 (2006) | |
| 2002 | ||
| j1 | J. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C. Martínez, M. Ullán: Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. Microelectronics Reliability 42(9-11): 1501-1504 (2002) | |
Colors in the list of coauthors
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