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Gerhard K. M. Wachutka
2000 – 2009
- 2009
[j8]Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka: Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory. Microelectronics Journal 40(1): 26-34 (2009)- 2008
[j7]Peter Borthen, Gerhard K. M. Wachutka: Testing semiconductor devices at extremely high operating temperatures. Microelectronics Reliability 48(8-9): 1440-1443 (2008)- 2006
[j6]Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka: Thermal characterisation of power devices during transient operation. Microelectronics Journal 37(2): 145-151 (2006)- 2004
[j5]Robert K. Thalhammer, Gerhard K. M. Wachutka: Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices. IEEE Trans. on CAD of Integrated Circuits and Systems 23(1): 60-70 (2004)
[j4]Robert K. Thalhammer, Gerhard K. M. Wachutka: Corrections to "Physically Rigorous Modeling of Internal Laser-Probing Techniques for Microstructured Semiconductor Devices". IEEE Trans. on CAD of Integrated Circuits and Systems 23(4): 581-582 (2004)- 2003
[j3]A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger: Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation. Microelectronics Reliability 43(9-11): 1895-1900 (2003)
1990 – 1999
- 1994
[j2]Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan: Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices. IEEE Trans. on CAD of Integrated Circuits and Systems 13(3): 293-302 (1994)- 1990
[j1]Gerhard K. M. Wachutka: Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling. IEEE Trans. on CAD of Integrated Circuits and Systems 9(11): 1141-1149 (1990)
Coauthor Index
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last updated on 2013-04-19 20:42 CEST by the dblp team



