Cuimei Wang

Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu: The influence of 1 nm AlN interlayer on properties of the Al_0.3Ga_0.7N/AlN/GaN HEMT structure. Microelectronics Journal 39(5): 777-781 (2008)

Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li: Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. Microelectronics Journal 39(9): 1108-1111 (2008)

Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li: Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. Microelectronics Journal 39(12): 1710-1713 (2008)

Xiaoyan Wang, Xiaoliang Wang, Guoxin Hu, Baozhu Wang, Zhiyong Ma, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li: Characteristics of high Al content Al_xGa_1-xN grown by metalorganic chemical vapor deposition. Microelectronics Journal 38(8-9): 838-841 (2007)

Junxue Ran, Xiaoliang Wang, Guoxin Hu, Junxi Wang, Jianping Li, Cuimei Wang, Yiping Zeng, Jinmin Li: Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD. Microelectronics Journal 37(7): 583-585 (2006)

Xiaoliang Wang, Cuimei Wang, Guoxin Hu, Junxi Wang, Junxue Ran, Cebao Fang, Jianping Li, Yiping Zeng, Jinmin Li, Xinyu Liu, He Qian: Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates. Science in China Series F: Information Sciences 48(6): 808-814 (2005)