Yangyuan Wang

Le Ye, Congyin Shi, Huailin Liao, Ru Huang, Yangyuan Wang: Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps. IEEE Trans. on Circuits and Systems 60-I(1): 95-107 (2013)

Jiapeng Zheng, Wei Li, Xueqing Lu, Yuhua Cheng, Yangyuan Wang: A low power and small area all digital delay-locked loop based on ring oscillator architecture. SCIENCE CHINA Information Sciences 55(2): 453-460 (2012)

Lingjuan Wu, Jennifer Trezzo, Diba Mirza, Paul Roberts, Jules Jaffe, Yangyuan Wang, Ryan Kastner: Designing an Adaptive Acoustic Modem for Underwater Sensor Networks. Embedded Systems Letters 4(1): 1-4 (2012)

Zhihua Dong, Jinyan Wang, C. P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang: High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. Microelectronics Reliability 52(2): 434-438 (2012)

Yangyuan Wang: The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption. SCIENCE CHINA Information Sciences 54(5): 915-935 (2011)

YanDong He, Xing Zhang, Yangyuan Wang: Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics. SCIENCE CHINA Information Sciences 54(12): 2673-2679 (2011)

Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang: HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. Microelectronics Reliability 51(9-11): 1515-1520 (2011)

Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang: Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. CICC 2011: 1-8

Ming Li, Jinfeng Kang, Yangyuan Wang: A novel voltage-type sense amplifier for low-power nonvolatile memories. SCIENCE CHINA Information Sciences 53(8): 1676-1681 (2010)

Wei Liu, Wei Li, Peng Ren, Chinglong Lin, Shengdong Zhang, Yangyuan Wang: A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop With Coupled TDC and DCO. J. Solid-State Circuits 45(2): 314-321 (2010)

Le Ye, Huailin Liao, Fei Song, Jiang Chen, Chen Li, Jinshu Zhao, Ruiqiang Liu, Chuan Wang, Congyin Shi, Junhua Liu, Ru Huang, Yangyuan Wang: A Single-Chip CMOS UHF RFID Reader Transceiver for Chinese Mobile Applications. J. Solid-State Circuits 45(7): 1316-1329 (2010)

Jin He, Xing Zhang, Yangyuan Wang, Xuemei Xi, Mansun Chan, Chenming Hu: Retraction notice to "Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs" [Microelectronics Journal 33 (2002) 667-670]. Microelectronics Journal 41(10): 693 (2010)

Jian Wang, Wenhua Wang, Ru Huang, Yunpeng Pei, Shoubin Xue, Xin'an Wang, Chunhui Fan, Yangyuan Wang: Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration. Microelectronics Reliability 50(8): 1094-1097 (2010)

Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang, Xing Zhang, Yangyuan Wang: Challenges of 22 nm and beyond CMOS technology. Science in China Series F: Information Sciences 52(9): 1491-1533 (2009)

Yangyuan Wang, Xing Zhang, Xiaoyan Liu, Ru Huang: Novel devices and process for 32 nm CMOS technology and beyond. Science in China Series F: Information Sciences 51(6): 743-755 (2008)

Teng Lin, Jianhua Feng, Yangyuan Wang: A New Test Data Compression Scheme for Multi-scan Designs. ISVLSI 2007: 179-185

Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang: A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. ISQED 2006: 115-120

Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang: A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. ISQED 2006: 127-132

Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang: Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. Microelectronics Reliability 43(5): 707-711 (2003)

Jin He, Xing Zhang, Ru Huang, Yangyuan Wang: Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. Microelectronics Reliability 42(1): 145-148 (2002)

Jin He, Xing Zhang, Ru Huang, Yangyuan Wang: Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. Microelectronics Reliability 41(12): 1953-1957 (2001)