| 2012 | ||
|---|---|---|
| j29 | Hei Wong: Advances in non-volatile memory technology. Microelectronics Reliability 52(4): 611-612 (2012) | |
| j28 | Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou: ICMAT 2011 - Reliability and variability of semiconductor devices and ICs. Microelectronics Reliability 52(8): 1531 (2012) | |
| j27 | Wing-Shan Tam, Sik-Lam Siu, Oi-Ying Wong, Chi-Wah Kok, Hei Wong, V. Filip: Modeling of terminal ring structures for high-voltage power MOSFETs. Microelectronics Reliability 52(8): 1645-1650 (2012) | |
| 2011 | ||
| j26 | Wing-Shan Tam, Sik-Lam Siu, Bing-Liang Yang, Chi-Wah Kok, Hei Wong: Off-state drain breakdown mechanisms of VDMOS with anti-JFET implantation. Microelectronics Reliability 51(12): 2064-2068 (2011) | |
| 2010 | ||
| j25 | Wing-Shan Tam, Oi-Ying Wong, Ka-Yan Mok, Chi-Wah Kok, Hei Wong: An Energy Efficient Half-Static Clock-Gating d-Type flip-Flop. Journal of Circuits, Systems, and Computers 19(3): 635-654 (2010) | |
| j24 | Yu. N. Novikov, A. V. Vishnyakov, V. A. Gritsenko, K. A. Nasyrov, Hei Wong: Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect. Microelectronics Reliability 50(2): 207-210 (2010) | |
| j23 | Wing-Shan Tam, Oi-Ying Wong, Tsz-Ching Ng, Chi-Wah Kok, Hei Wong: Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure. Microelectronics Reliability 50(5): 622-626 (2010) | |
| j22 | Oi-Ying Wong, Wing-Shan Tam, Jun Liu, Oi-Kan Shea, Shiu Hung Cheung, Chi-Wah Kok, Hei Wong: Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors. Microelectronics Reliability 50(5): 627-630 (2010) | |
| j21 | Wing-Shan Tam, Oi-Ying Wong, Chi-Wah Kok, Hei Wong: Generating sub-1V reference voltages from a resistorless CMOS bandgap reference circuit by using a piecewise curvature temperature compensation technique. Microelectronics Reliability 50(8): 1054-1061 (2010) | |
| 2009 | ||
| j20 | Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai: Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. Microelectronics Reliability 49(4): 387-391 (2009) | |
| j19 | Oi-Ying Wong, Wing-Shan Tam, Oi-Kan Shea, Shiu Hung Cheung, Jun Liu, Chi-Wah Kok, Hei Wong: Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor. Microelectronics Reliability 49(5): 506-509 (2009) | |
| c1 | Oi-Ying Wong, Wing-Shan Tam, Chi-Wah Kok, Hei Wong: Area Efficient 2n× Switched Capacitor Charge Pump. ISCAS 2009: 820-823 | |
| 2008 | ||
| j18 | C. K. Wong, Hei Wong, M. Chan, Y. T. Chow, H. P. Chan: Silicon oxynitride integrated waveguide for on-chip optical interconnects applications. Microelectronics Reliability 48(2): 212-218 (2008) | |
| j17 | Banani Sen, Bing-Liang Yang, Hei Wong, Chi-Wah Kok, P. K. Chu, A. Huang: Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation. Microelectronics Reliability 48(11-12): 1765-1768 (2008) | |
| 2007 | ||
| j16 | Hei Wong, V. Filip, C. K. Wong, P. S. Chung: Silicon integrated photonics begins to revolutionize. Microelectronics Reliability 47(1): 1-10 (2007) | |
| j15 | Sergey Shaimeev, Vladimir Gritsenko, Kaupo Kukli, Hei Wong, Eun-Hong Lee, Chungwoo Kim: Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. Microelectronics Reliability 47(1): 36-40 (2007) | |
| 2006 | ||
| j14 | V. Filip, Hei Wong, D. Nicolaescu: Definition of curve fitting parameter to study tunneling and trapping of electrons in Si/ultra-thin SiO2/metal structures. Microelectronics Reliability 46(7): 1027-1034 (2006) | |
| j13 | C. K. Wong, Hei Wong, M. Chan, Chi-Wah Kok, H. P. Chan: Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride. Microelectronics Reliability 46(12): 2056-2061 (2006) | |
| 2005 | ||
| j12 | Nian Zhan, M. C. Poon, Hei Wong, K. L. Ng, Chi-Wah Kok: Dielectric breakdown characteristics and interface trapping of hafnium oxide films. Microelectronics Journal 36(1): 29-33 (2005) | |
| 2004 | ||
| j11 | Bing-Liang Yang, P. T. Lai, Hei Wong: Conduction mechanisms in MOS gate dielectric films. Microelectronics Reliability 44(5): 709-718 (2004) | |
| 2003 | ||
| j10 | Hei Wong: Low-frequency noise study in electron devices: review and update. Microelectronics Reliability 43(4): 585-599 (2003) | |
| j9 | Jackie Chan, Hei Wong, M. C. Poon, Chi-Wah Kok: Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. Microelectronics Reliability 43(4): 611-616 (2003) | |
| j8 | V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger: Onefold coordinated oxygen atom: an electron trap in the silicon oxide. Microelectronics Reliability 43(4): 665-669 (2003) | |
| j7 | K. L. Ng, Nian Zhan, Chi-Wah Kok, M. C. Poon, Hei Wong: Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing. Microelectronics Reliability 43(8): 1289-1293 (2003) | |
| 2002 | ||
| j6 | Hei Wong: Recent developments in silicon optoelectronic devices. Microelectronics Reliability 42(3): 317-326 (2002) | |
| j5 | Hei Wong, V. A. Gritsenko: Defects in silicon oxynitride gate dielectric films. Microelectronics Reliability 42(4-5): 597-605 (2002) | |
| j4 | P. G. Han, Hei Wong, Andy H. P. Chan, M. C. Poon: A novel approach for fabricating light-emitting porous polysilicon films. Microelectronics Reliability 42(6): 929-933 (2002) | |
| j3 | Bing-Liang Yang, N. W. Cheung, S. Denholm, J. Shao, Hei Wong, P. T. Lai, Y. C. Cheng: Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. Microelectronics Reliability 42(12): 1985-1989 (2002) | |
| 2001 | ||
| j2 | Hei Wong, P. G. Han, M. C. Poon, Y. Gao: Investigation of the surface silica layer on porous poly-Si thin films. Microelectronics Reliability 41(2): 179-184 (2001) | |
| j1 | M. C. Poon, Y. Gao, Ted Chi-Wah Kok, A. M. Myasnikov, Hei Wong: SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer. Microelectronics Reliability 41(12): 2071-2074 (2001) | |
Colors in the list of coauthors
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